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STTA312B
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY VERY LOW OVERALL POWER LOSSES AND PARTICULARY LOW FORWARD VOLTAGE HIGHFREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY 3A 1200 V 65 ns 1.7 V
K
A NC
DPAK
DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations. They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitablefor the secondaryof SMPS as high voltage rectifier diodes.
ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal Value 1200 1200 6 35 25 - 65 to + 150 125 Unit V V A A A C C
TURBOSWITCH is a trademark of STMicroelectronics
January 1999 - Ed: 4A
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STTA312B
THERMAL AND POWER DATA Symbol Rth (j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 3A, = 0.5 Tc = 80C Tc = 76C Tests conditions Value 6.5 6.7 7.5 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF ** IR * Vto rd
Test pulses :
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Tests conditions IF = 3 A IF = 3 A VR = 0.8 X VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min.
Typ. 1.15 150
Max. 1.8 1.7 20 400 1.15 185
Unit V A A V m
To evaluatethe maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Tj = 25C Test conditions IF= 0.5A IR=1A Irr= 0.25A IF= 1A dIF/dt= 50A/s VR= 30V IF= 3A VR= 600V dIF/dt = -16A/s dIF/dt = -50A/s IF= 3A VR= 600V dIF/dt = -50A/s Min. Typ. Max. Unit 65 115 A 3.6 6.0 1.2 ns
IRM
Maximum recovery current Softness factor
Tj = 125C
S factor
Tj = 125C
TURN-ON SWITCHING Symbol tfr VFP Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF=3A dIF/dt = 16A/s Measured at 1.1 x VFmax Min. Typ. Max. 900 35 Unit ns V
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STTA312B
Fig. 1: Conductionlosses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A) 3E+1
= 0.1 = 0.2 = 0.5
P1(W) 8 7 6 5 4 3 2 1 0 0.0 0.5 1.0 IF(av) (A) 1.5 2.0 2.5 3.0 3.5
=1
1E+1
1E+0
Tj=125C
1E-1
Tj=25C
VFM(V) 1E-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3
= 0.5
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A) 14 12 10 8
IF=IF(av) VR=600V Tj=125C IF=2*IF(av)
= 0.2 = 0.1
6
T
Single pulse
4
tp
tp(s) 1E-2 1E-1
=tp/T
2
1E+0
dIF/dt(A/s) 0 10 20 30 40 50 60 70 80 90 100
0
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 600 500 400
IF=2*IF(av) VR=600V Tj=125C
Fig. 6: Softness factor tb/ta versus dI F/dt (typical values).
S factor 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5
IF<2*IF(av) VR=600V Tj=125C
300 200 100 0 10 20
IF=IF(av)
dIF/dt(A/s)
30 40 50 60 70 80 90 100
dIF/dt(A/s)
0 10 20 30 40 50 60 70 80 90 100
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Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj=125C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V)
1.1
S factor
60 50 40
IF=IF(av) Tj=125C
1.0
0.9
IRM
30 20
0.8 Tj(C) 0.7 25 50 75 100 125
10 0
dIF/dt(A/s)
0 20 40 60 80 100
Fig. 9: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 1000 900 800 700 600 500
VFR=1.1*VF max. IF=IF(av) Tj=125C
dIF/dt(A/s)
400 0 20 40 60 80 100
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APPLICATION DATA The 1200V TURBOSWITCHTM series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. In such application (fig. A to D), the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the diode due to the diode
Fig. A : "FREEWHEEL MODE".
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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STTA312B
APPLICATION DATA (Cont'd) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM t T = t/T
F = 1/T
Fig. D : RECTIFIER DIODE.
Fig. E : STATIC CHARACTERISTICS. Conduction losses :
I
P1 = Vt0 x IF(AV) + Rd x IF2(RMS)
IF Rd VR V IR V tO VF
Reverse losses : P2 = VR x IR x (1 - )
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APPLICATION DATA (Cont'd) Fig. F : TURN-OFF CHARACTERISTICS.
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x (3+2 x S) F 6 x dIF dt VR x IRM x IL x(S + 2) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dIR /dt VR trr = ta + tb I dI F /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
Turn-off losses :
DIODE
P3 =
VR x IRM 2 x x S x F 6 x dIF dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : with non negligible serial inductance P3' =
VR x IRM 2 x S x F L x IRM 2 x F + 6 x dIF dt 2
P3, P3' and P5 are suitable for power MOSFET and IGBT
Fig. G : TURN-ON CHARACTERISTICS.
IF dI F /dt I Fmax
Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F
0 VF V Fp
t
1.1V F 0 tfr
VF t
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STTA312B
PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8
FOOTPRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7 3 1.6 2.3 2.3 1.6
Ordering type
Marking
Package DPAK DPAK
Weight 0.3g 0.3g
Base qty 75 2500
Delivery mode Tube Tape & reel
STTA312B A312 STTA312B-TR A312 Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 8/8

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